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 SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1640
DESCRIPTION *With TO-220F package *Low collector saturation voltage *Good linearity of hFE APPLICATIONS *For switching regulator ,driver and power amplifier applications
PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25 )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -30 -30 -5 -7 -10 40 150 -55~150 UNIT V V V A A W
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN
2SA1640
SYMBOL
TYP.
MAX
UNIT
V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT
Collector-emitter breakdown voltage
IC=-10mA ; IB=0 IC=-1mA ; IE=0 IE=-1mA ; IC=0 IC=-3A ;IB=-0.1A IC=-3A ;IB=-0.1A VCB=-30V; IE=0 VEB=-5V; IC=0 IC=-0.2A ; VCE=-2V IC=-0.5A ; VCE=-10V
-30
V
Collector-base breakdown voltage
-30
V
Emitter-base breakdown voltage
-5
V
Collector-emitter saturation voltage
-0.4
V
Base-emitter saturation voltage
-1.0
V
Collector cut-off current
-10
A
Emitter cut-off current
-10
A
DC current gain
100
300
Transition frequency
20
MHz
2
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2SA1640
Fig.2 Outline dimensions
3


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